Numerical analysis of Cu2ZnSnS4 solar cells on Si substrate
نویسندگان
چکیده
在Si衬底上制备的Cu2ZnSnS4(CZTS)太阳能电池具有CZTS与Si衬底的晶格失配低的优点, 但目前其转换效率仍较低. 本文采用异质结太阳能电池仿真软件Afors-het对Si衬底CZTS太阳能电池进行数值计算. 对现有的p-CZTS/n-Si太阳能电池的计算结果表明, 在该电池结构中p-CZTS和n-Si分别起窗口层和吸收层的作用, 但p-CZTS具有高光吸收系数, 使大部分入射光无法透过p-CZTS层进而被n-Si吸收, 限制了电池的转换效率. 本文提出以p-Si作为衬底的n-ZnO:Al/i-ZnO/n-CdS/p-CZTS/p-Si太阳能电池结构. 计算得到的p-CZTS/p-Si结构的暗态电流密度-电压(J–V)特性曲线均为线性曲线, 表明p-CZTS与p-Si为欧姆接触以及p-Si作为p-CZTS的背电极的可行性. 进一步计算了p-Si的厚度与掺杂浓度、p-CZTS的厚度与掺杂浓度对n-ZnO:Al/i-ZnO/n-CdS/p-CZTS/p-Si太阳能电池光伏特性的影响, 在不考虑寄生串并联电阻效应和缺陷态的理想情况下, 电池的最高转换效率为28.41%. 本文计算结果表明, n-ZnO:Al/i-ZnO/n-CdS/p-CZTS/p-Si太阳能电池可解决现有p-CZTS/n-Si结构存在的问题, 是一种合适的Si衬底CZTS太阳能电池结构.
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ژورنال
عنوان ژورنال: Chinese Physics
سال: 2021
ISSN: ['1000-3290']
DOI: https://doi.org/10.7498/aps.70.20201936